Electron mobility in thin In0.53Ga0.47As channel
Eduard Cartier, Amlan Majumdar, et al.
ESSDERC 2017
We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs. © 2008 IEEE.
Eduard Cartier, Amlan Majumdar, et al.
ESSDERC 2017
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VLSI Technology 2006
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