Amlan Majumdar, Xinlin Wang, et al.
IEEE Electron Device Letters
We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs. © 2008 IEEE.
Amlan Majumdar, Xinlin Wang, et al.
IEEE Electron Device Letters
Amlan Majumdar
IEEE Electron Device Letters
Naoki Tega, Hiroshi Miki, et al.
IRPS 2011
James Pan, Anna Topol, et al.
VLSI Technology 2006