P. Hashemi, M. Kobayashi, et al.
VLSI Circuits 2013
Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ∼1.5× 10-9 Ω · cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge 0.3 with a chemical boron-doping density of 2× 10 21/cm3. This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found. © 1980-2012 IEEE.
P. Hashemi, M. Kobayashi, et al.
VLSI Circuits 2013
Solomon Assefa, Fengnian Xia, et al.
Optics Express
Shuangshuang Zeng, Chenyu Wen, et al.
Nature Nanotechnology
Fei Liu, Benjamin Fletcher, et al.
IITC 2013