Conference paper
New paradigms for cost-effective III-V photovoltaic technology
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ∼1.5× 10-9 Ω · cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge 0.3 with a chemical boron-doping density of 2× 10 21/cm3. This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found. © 1980-2012 IEEE.
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
Devendra Sadana, Stephen W. Bedell, et al.
ECS Transactions
Kunal Mukherjee, Brent A. Wacaser, et al.
Applied Physics Letters
Davood Shahrjerdi, Stephen W. Bedell, et al.
PVSC 2012