Arvind Kumar, Steven E. Laux, et al.
Physical Review B
An experimental study of hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field effect transistors, was presented in the article. The hot carriers were generated either optically or by direct injection in the dark from a forward-biased p-n junction. The buildup of positive charge in the dielectric during stresses was indicated by the study of the time dependence of the gate current.
Arvind Kumar, Steven E. Laux, et al.
Physical Review B
Massimo V. Fischetti, Steven E. Laux
Physical Review B
Jeng-Bang Yau, Jin Cai, et al.
VLSI-TSA 2009
Wilfried Haensch, Edward J. Nowak, et al.
IBM J. Res. Dev