Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Discrete deep levels form at Al/GaAs(100) interfaces whose energies and state densities change with surface preparation conditions. Modifications in surface chemical composition and reconstruction with annealing temperature produce systematic changes in a set of interface states spanning the energy range ≈0.8 eV to 1.2 eV, as well as alter the interface barrier height. These results demonstrate close correlation between the interface states observed directly via low-energy cathodoluminescence spectroscopy and the Fermi level movement at Al/GaAs(100) interfaces and emphasize the central role of surface preparation in achieving controlled Schottky barrier behavior. © 1992.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Imran Nasim, Melanie Weber
SCML 2024
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008