Ching-Te Chuang, Denny D. Tang, et al.
IEEE Journal of Solid-State Circuits
A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of Pt Si high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7-um 2.0 x 1016cm-3epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 x 1012ions/cm2. Higher 265es result in wide-spread degraded device characteristics. © 1985 IEEE
Ching-Te Chuang, Denny D. Tang, et al.
IEEE Journal of Solid-State Circuits
T.C. Chen, D.D. Tang, et al.
IEDM 1988
J. Warnock, P.F. Lu, et al.
IEDM 1989
C.T. Chuang, G.P. Li, et al.
ECS Meeting 1984