PaperOrigin of the nonexponential thermal emission kinetics of DX centers in GaAlAsE. Calleja, P.M. Mooney, et al.Applied Physics Letters
PaperTemperature dependence of minority-carrier mobility and recombination time in p-type GaAsK. Beyzavi, K. Lee, et al.Applied Physics Letters
Conference paperSurface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructionsI.M. Vitomirov, A. Raisanen, et al.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
