IEEE Transactions on Electron Devices

Paper

01 Jan 1993

IVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition

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Abstract

No abstract available.

Paper

Energy band alignment in GaAs:(Al,Ga)As heterostructures

J. Batey, S.L. Wright

Surface Science

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The capture barrier of the DX center in Si-doped Al_xGa _1-xAs

P.M. Mooney, N. Caswell, et al.

Journal of Applied Physics

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Effects of the local environment on the properties of DX centers in Si-doped GaAs and dilute Al_xGa_1-xAs alloys

E. Calleja, F. Garcia, et al.

Applied Physics Letters

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Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctions

J. Batey, S.L. Wright, et al.

Journal of Applied Physics

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