Conference paper
A 5.5-GHz low noise amplifier in SiGe BiCMOS
Herschel A. Ainspan, Charles S. Webster, et al.
ESSCIRC 1998
A 10.5- to 11-GHz fully monolithic voltage controlled dilator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of O to 3 V. The circuit draws less than 8 niA from a 3-V supply including the reference branch bias current.
Herschel A. Ainspan, Charles S. Webster, et al.
ESSCIRC 1998
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE Transactions on Electron Devices
Joachim N. Burghartz, Jean-Olivier Plouchart, et al.
IEEE Electron Device Letters
Albert X. Widmer, Kevin Wrenner, et al.
IEEE Journal of Solid-State Circuits