S.J. Koester, K.L. Saenger, et al.
Electronics Letters
We report on the dc and RF characterization of laterally scaled, Si - SiGe n-MODFETs. Devices with gate length, Lg, of 80 nm had fT = 79 Ghz and fmax = 212 Ghz, while devices with Lg = 70 nm had fT as high as 92 Ghz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds. © 2005 IEEE.
S.J. Koester, K.L. Saenger, et al.
Electronics Letters
K. Ismail, M. Arafa, et al.
Applied Physics Letters
Kai Shum, P.M. Mooney, et al.
Physical Review B - CMMP
L. Tilly, P.M. Mooney, et al.
Applied Physics Letters