Supratik Guha, Arunava Gupta, et al.
Applied Physics Letters
We demonstrate a ternary (LaxY1-x)2O 3 thin-film oxide that can be grown epitaxially on Si(111) substrates with a lattice constant that can be matched to twice the lattice constant of silicon. We further show that silicon can then be deposited epitaxially (though with a high defect density) on this oxide such that epitaxial silicon/oxide/silicon structures may be grown. We discuss the microstructural relationships and the growth modes for the oxide on silicon and silicon on oxide growths. © 2002 American Institute of Physics.
Supratik Guha, Arunava Gupta, et al.
Applied Physics Letters
Julian Buchel, Athanasios Vasilopoulos, et al.
IEEE JESTCS
Supratik Guha, Vijay Narayanan
Physical Review Letters
Sidney Tsai, Hadjer Benmeziane, et al.
IMW 2025