Conference paper
Capacitance analysis of wire-array solar cell
Oki Gunawan, Babak Fallahazad, et al.
PVSC 2010
We demonstrate a ternary (LaxY1-x)2O 3 thin-film oxide that can be grown epitaxially on Si(111) substrates with a lattice constant that can be matched to twice the lattice constant of silicon. We further show that silicon can then be deposited epitaxially (though with a high defect density) on this oxide such that epitaxial silicon/oxide/silicon structures may be grown. We discuss the microstructural relationships and the growth modes for the oxide on silicon and silicon on oxide growths. © 2002 American Institute of Physics.
Oki Gunawan, Babak Fallahazad, et al.
PVSC 2010
Siddarth Krishnan, Vijay Narayanan, et al.
IRPS 2012
Evgeni P. Gusev, Vijay Narayanan, et al.
IBM J. Res. Dev
Sufi Zafar, A.C. Callegari, et al.
Applied Physics Letters