S. Guha, H. Munekata, et al.
Journal of Applied Physics
With the application of a magnetic field, we have observed a semimetal-to-semiconductor transition in InAs-GaSb superlattices with closely overlapped subbands of electrons and holes. The transition is manifested in a sharp increase in the magnetoresistance in the quantum limit, where the ground Landau levels associated with the subbands are crossed at the Fermi level, resulting in carrier depletion.
S. Guha, H. Munekata, et al.
Journal of Applied Physics
L.L. Chang, N. Kawai, et al.
Applied Physics Letters
M.R. Freeman, D.D. Awschalom, et al.
Physical Review Letters
J. Bleuse, P. Voisin, et al.
Applied Physics Letters