Measurement of VLSI Power Supply Current by Electron-Beam Probing

Keith A. Jenkins; Robert L. Franch

doi:10.1109/4.135341

IEEE Journal of Solid-State Circuits

Paper

01 Jan 1992

Measurement of VLSI Power Supply Current by Electron-Beam Probing

View publication

Abstract

The measurement of power supply noise and current by electron-beam probing is described. Noise measurements can be made on the chip under test, and current measurements can be made on the circuit board. © 1992 IEEE

Paper

Effective crosstalk isolation through p⁺ Si substrates with semi-insulating porous Si

Han-Su Kim, Keith A. Jenkins, et al.

IEEE Electron Device Letters

Conference paper

Electrical characterization of 3D Through-Silicon-Vias

Fei Liu, Xiaoxiong Gu, et al.

ECTC 2010

Conference paper

High f_MAX/f_T ratio in multi-finger embedded T-shaped gate graphene transistors

Shu-Jen Han, Satoshi Oida, et al.

DRC 2013

Conference paper

High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications

Jonghae Kim, Jean-Olivier Plouchart, et al.

RFIC 2003

View all publications

Abstract

Related

Effective crosstalk isolation through p+ Si substrates with semi-insulating porous Si

Electrical characterization of 3D Through-Silicon-Vias

High fMAX/fT ratio in multi-finger embedded T-shaped gate graphene transistors

High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications

Effective crosstalk isolation through p⁺ Si substrates with semi-insulating porous Si

High f_MAX/f_T ratio in multi-finger embedded T-shaped gate graphene transistors