Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A detailed cause-and-effect stochastic model is developed to relate the type, size, location, and frequency of observed defects to the final yield in IC manufacturing. The model is estimated on real data sets with a large portion of unclassified defects and uninspected layers, and in presence of clustering of defects. Results of this analysis are used for evaluating kill ratios and effects of different factors, identifying the most dangerous cases and the most probable causes of failures, forecasting the yield, and designing optimal yield-enhancement strategies. © 2008 IEEE.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
T. Schneider, E. Stoll
Physical Review B