Channel doping impact on FinFETs for 22nm and beyond
Chung-Hsun Lin, R. Kambhampati, et al.
VLSI Technology 2012
In advanced technology nodes, an increase in power density, use of nonplanar architectures, and novel materials can aggravate local self-heating due to active power dissipation. In this paper, 3-D device simulations are performed to analyze thermal effects in fin-shaped field-effect transistors (FinFETs) and stacked-nanowire FETs (NWFETs). Based on empirically extracted equations, a new model for thermal resistance estimation is proposed, which for the first time takes into account the aggregate impact of a number of fins, number of gate fingers, number, and dimensions of stacked nanowires. We have extracted the proposed model against calibrated 3-D TCAD simulations over a range of device design variables of interest. Our results show that the model may be useful for estimation of thermal resistance in FinFETs and NWFETs with large layouts.
Chung-Hsun Lin, R. Kambhampati, et al.
VLSI Technology 2012
Ishita Jain, Anil K. Bansal, et al.
S3S 2015
Terence B. Hook, F. Allibert, et al.
S3S 2014
Anil K. Bansal, Charu Gupta, et al.
IEEE T-ED