J.Y. Wu, Matthew Breitwisch, et al.
IEDM 2011
An empirical, versatile finite-element model is developed to predict void formation in as-deposited or melt-quenched amorphous Ge2Sb2Te5 during annealing. This model incorporates void formation with nucleation and growth of the crystals along with thermal models that capture laser heating of the nano-structures during device fabrication. Modeling of void formation during Joule heating or furnace annealing can be implemented in a similar way. The modeling results are compared to example experimental results obtained from pore-cell phase change memory structures.
J.Y. Wu, Matthew Breitwisch, et al.
IEDM 2011
Abu Sebastian, Manuel Le Gallo, et al.
Journal of Applied Physics
Mustafa B. Akbulut, Faruk Dirisaglik, et al.
IEEE T-ED
Win-San Khwa, Meng-Fan Chang, et al.
IEEE JSSC