Modeling of void formation in phase change memory devices
- Adam Cywar
- Zachary Woods
- et al.
- 2020
- Solid-State Electronics
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99 results for Chung Lam
Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt
- Sadid Muneer
- Jake Scoggin
- et al.
- 2018
- AIP Advances
Reliability benefits of a metallic liner in confined PCM
- Wanki Kim
- S. Kim
- et al.
- 2018
- IRPS 2018
Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer
- Y. Xie
- Wanki Kim
- et al.
- 2018
- Advanced Materials
High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films
- Lhacene Adnane
- Faruk Dirisaglik
- et al.
- 2017
- Journal of Applied Physics
Smart memory: A neuromorphic semiconductor memory
- Chung Lam
- 2016
- ICSICT 2016
Directed self-assembly patterning strategies for phase change memory applications
- Robert L. Bruce
- Gloria Fraczak
- et al.
- 2017
- SPIE Advanced Lithography 2017
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
- W. Chien
- Huai-Yu Cheng
- et al.
- 2016
- IEDM 2016
ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016
A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2017
- IEEE JSSC