Advanced Multi-Vt Enabled by Selective Layer Reductions for 2nm Nanosheet Technology and Beyond
- Ruqiang Bao
- Yusuke Oniki
- et al.
- 2024
- IEDM 2024
Publications
Date
Featured collections
Popular topics
123 results for Yu Zhu
Monolithic Stacked FET with Stepped Channels for Future Logic Technologies
- Chen Zhang
- Seungmin Song
- et al.
- 2024
- IEDM 2024
Modeling of void formation in phase change memory devices
- Adam Cywar
- Zachary Woods
- et al.
- 2020
- Solid-State Electronics
Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics
- Sufi Zafar
- Christopher P. D’Emic
- et al.
- 2018
- ACS Nano
Reliability benefits of a metallic liner in confined PCM
- Wanki Kim
- S. Kim
- et al.
- 2018
- IRPS 2018
Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes
- Hiroyuki Miyazoe
- Nathan Marchack
- et al.
- 2018
- JVSTB
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer
- Y. Xie
- Wanki Kim
- et al.
- 2018
- Advanced Materials
High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films
- Lhacene Adnane
- Faruk Dirisaglik
- et al.
- 2017
- Journal of Applied Physics