K. Rim, E. Gusev, et al.
VLSI Technology 2002
We report the growth of n-type modulation-doped Si/SiGe with the doped SiGe supply layer underneath the strained Si channel. The mobility and charge density are measured in samples with 2- and 3-nm-thick spacers using gated Hall measurements. A peak room temperature mobility of 2200 cm2/V s is measured at a sheet density of 2.5×1012 cm-2. The measurements indicate a clear mobility modulation especially near threshold. Our layer design allows the gate to induce a sheet charge density of up to 3.2×1012 cm-2, before any significant reduction in the mobility is observed.
K. Rim, E. Gusev, et al.
VLSI Technology 2002
F. Fang, P.J. Wang, et al.
Surface Science
R.M. Feenstra, M.A. Lutz, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Srijit Goswami, K.A. Slinker, et al.
Nature Physics