Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Atomic force microscopy is used to measure surface morphology of modulation doped Si/SiGe heterostructures. Three components in the surface roughness are observed: μm-scale roughness arising from misfit dislocations formed to relieve strain, 1000-angstrom-scale roughness believed to be associated with three-dimensional growth of the electron or hole channel layers, and atomic-scale roughness with wavelengths of 10-100 angstrom. Detailed Fourier spectra of the roughness are obtained and used as input to a scattering computation for determining mobility. The results are compared with other mobility-limiting mechanisms, including scattering from ionized impurities and from dislocations.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Ronald Troutman
Synthetic Metals
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010