PaperHot electrons in silicon dioxide: Ballistic to steady-state transportD.J. DiMaria, M.V. FischettiApplied Surface Science
PaperResidual Stress, Chemical Etch Rate, Refractive Index, and Density Measurements on SiO2 Films Prepared Using High Pressure OxygenE.A. Irene, D.W. Dong, et al.JES
PaperTA-A2 Electrically Alterable Read-only Memory Using Si Rich SiO2 Injectors and a Floating Polycrystalline Silicon Storage LayerD.J. DiMaria, K.M. DeMeyer, et al.IEEE T-ED
PaperCentroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique)D.J. DiMaria, D.R. Young, et al.Journal of Applied Physics
