K. Rim, R. Anderson, et al.
Solid-State Electronics
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps. © 1995, IEE. All rights reserved.
K. Rim, R. Anderson, et al.
Solid-State Electronics
J.N. Burghartz, M. Soyuer, et al.
ESSDERC 1995
J.Y.-C. Sun, J.H. Comfort, et al.
VLSI-TSA 1991
J.N. Burghartz
SiRF 1998