Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
The nitrogen interface engineering with Al 2O 3 capacitors for improved thermal stability was analyzed. It was observed that the bottom SiN x was formed with NH 3anneal. and top SiN x was formed with ultrahigh vacuum chemical vapor deposition (UHVCVD). The thermal stability beyond the 1050°C-30 s anneal for the capacitors with UHVCVD SiN x was also discussed. It was found that the leakage current remains below 1×10 -8 A/cm 2 after four thermal stresses to 1000°C and exceeding 1000°C.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983