Influence and model of gate oxide breakdown on CMOS inverters
R. Rodríguez, J.H. Stathis, et al.
Microelectronics Reliability
We show that silicon dangling bonds with different nearest-neighbor configurations and energy levels can be resolved by electron spin resonance (ESR) in silicon nitride. Using an in situ bias technique on large-area metal-nitride-silicon structures, we demonstrate that the ESR line in Si-rich nitride consists of an inhomogeneous distribution of discrete components at different g values. We show that trapping of holes occurs at a site with a g value of 2.0052 corresponding to a pure Si environment, while electron trapping occurs at a site with a g value of 2.0028, corresponding to a pure N environment.
R. Rodríguez, J.H. Stathis, et al.
Microelectronics Reliability
M.J. Uren, V. Nayar, et al.
JES
J.H. Stathis, R. Bolam, et al.
INFOS 2005
J.H. Stathis, L. Dori
Applied Physics Letters