T.Y. Tan
Applied Physics Letters
An experiment was carried out to study oxidation-enhanced and oxidation-retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2 at 1160°C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model assuming that Si self-interstitials and vacancies coexist in Si in thermal equilibrium at high temperatures. A small adjustment to the interstitial supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects vacancies into (111) wafers in addition to the normal mechanism of interstitial injection due to SiO2 growth.
T.Y. Tan
Applied Physics Letters
T.Y. Tan, U. Goesele
VLSI Science and Technology 1983
E. Rimini, W.K. Chu, et al.
Applied Physics Letters
R. Butz, G.W. Rubloff, et al.
Physical Review B