M. Heiblum, M.V. Fischetti, et al.
Physical Review Letters
An instability of the electron concentration is predicted in a semiconductor with a nearly saturating drift velocity and a diffusion constant which increases with increasing electric field. A small signal analysis shows under what conditions fluctuations of the carrier concentration will be unstable. © 1967 The American Institute of Physics.
M. Heiblum, M.V. Fischetti, et al.
Physical Review Letters
W.P. Dumke
IEEE T-ED
M. Heiblum, E. Calleja, et al.
Physical Review Letters
W.P. Dumke, R.R. Haering
Physical Review