R. Ghez, M.B. Small
JES
An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures. © 1983 Springer-Verlag.
R. Ghez, M.B. Small
JES
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
A. Gangulee, F.M. D'Heurle
Thin Solid Films