R.W. Gammon, E. Courtens, et al.
Physical Review B
Utilizing the unique feature of Fermi-level pinning at the InAs surface, one-dimensional electron transport has been achieved at the edge of confined InAs layers. At low temperatures, the transport is characterized by a much enhanced conductance with a flat temperature dependence in comparison with that in the hulk. Negative magnetoresistance, Shubnikov-dc Haas oscillations and conductance fluctuations are further manifestations of one-dimensional surface conduction. © 1992.
R.W. Gammon, E. Courtens, et al.
Physical Review B
Sung Ho Kim, Oun-Ho Park, et al.
Small
R. Ghez, J.S. Lew
Journal of Crystal Growth
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992