Phenomena produced by ion bombardment in plasma-assisted etching environments

Harold F. Winters

doi:10.1116/1.575225

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Paper

01 Jan 1988

Phenomena produced by ion bombardment in plasma-assisted etching environments

View publication

Abstract

The emphasis of this review paper will be to summarize recent experimental results, describe and evaluate contemporary concepts in the etching field, and to provide references to recent work. © 1988, American Vacuum Society. All rights reserved.

Paper

Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching

U. Wieser, U. Kunze, et al.

Physica E: Low-Dimensional Systems and Nanostructures

Paper

Schottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theories

A.B. McLean, R.H. Williams

Journal of Physics C: Solid State Physics

Paper

The boundary contour method for three-dimensional linear elasticity

A. Nagarajan, S. Mukherjee, et al.

Journal of Applied Mechanics, Transactions ASME

Paper

Ab initio molecular dynamics simulation of liquids and solutions

Michiel Sprik

Journal of Physics Condensed Matter

View all publications

Abstract

Related

Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching

Schottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theories

The boundary contour method for three-dimensional linear elasticity

Ab initio molecular dynamics simulation of liquids and solutions