M.A. Meyer, O. Aubel, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2008
Room temperature recrystallization responses of blanket electroplated Cu thin films deposited under various conditions were monitored in real-time using synchrotron X-ray diffraction. Nominal control of electroplating parameters such as plating current, bath chemistry, and plating time was found to be insufficient to ensure repeatability of the 50% recrystallization time, τ50, from sample to sample even though the thickness variations between samples were insignificant. Real-time X-ray analysis of samples from numerous electroplating baths showed that, for a given seed deposition process, a reliable estimation of τ50 at room temperature can be obtained from the ratio of the integrated intensities of the 111 and 200 Cu reflections, I−111/I−200, of the electroplated film at time zero (immediately after plating). Among the plating parameters investigated seed-layer texture most influenced this ratio and, hence, the subsequent room temperature recrystallization behavior of the plated film.
M.A. Meyer, O. Aubel, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2008
O. Aubel, M.A. Meyer, et al.
Microelectronic Engineering
C.-K. Hu, Matthew Angyal, et al.
International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
James M.E. Harper, Sandra G. Malhotra, et al.
Materials Research Society Symposium-Proceedings