Mechanisms of Electromigration Damage in Cu Interconnects
- C. K. Hu
- Lynne Gignac
- et al.
- 2018
- IEDM 2018
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11 results for Yuri Ostrovski
Future on-chip interconnect metallization and electromigration
- C. K. Hu
- James Kelly
- et al.
- 2018
- IRPS 2018
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
- C. K. Hu
- James Kelly
- et al.
- 2017
- IITC 2017
Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
- F. Ito
- H. Shobha
- et al.
- 2010
- ADMETA 2010
Integration compatible porous SiCOH dielectrics from 45 to 22 nm
- S. Gates
- A. Grill
- et al.
- 2008
- ADMETA 2008
Development and optimization of porous pSiCOH interconnect dielectrics for 45 nm and beyond
- A. Grill
- S. Gates
- et al.
- 2008
- IITC 2008
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- S. Gates
- A. Grill
- et al.
- 2006
- ADMETA 2006
Effect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnects
- E. T. Todd Ryan
- Stephen M. Gates
- et al.
- 2014
- Journal of Applied Physics
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
Effects of chemical mechanical polishing on a porous SiCOH dielectric
- S. Gates
- S. Papa Rao
- et al.
- 2012
- Microelectronic Engineering