Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide

Shu-Jen Han, Dharmendar Reddy, et al.

ACS Nano

S. Cohen, J.C. Liu, et al.

MRS Spring Meeting 1999

T. Schneider, E. Stoll

Physical Review B

P. Alnot, D.J. Auerbach, et al.

Surface Science