High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
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27 results for John Aitken
Projected Life-Times of Circuits in Krypton 85 Contaminated Packages
- G.A. Sai-Halasz
- J.M. Aitken
- 1982
- IEEE Electron Device Letters
Sensitive Technique for Measuring Small MOS Gate Currents
- F.H. Gaensslen
- J.M. Aitken
- 1980
- IEEE Electron Device Letters
1 µm MOSFET VLSI Technology: Part VIII-Radiation Effects
- John M. Aitken
- 1979
- IEEE JSSC
Temperature and field interrelation study of low-k TDDB for Cu interconnects with and without liner - New insights to the roles of Cu for a competing breakdown process
- Fen Chen
- Michael Shinosky
- et al.
- 2013
- IRPS 2013
Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- Fen Chen
- Jeffrey Gambino
- et al.
- 2012
- IRPS 2012
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
- D.P. Ioannou
- K. Zhao
- et al.
- 2011
- IRPS 2011
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- F. Chen
- M. Shinosky
- et al.
- 2009
- IRPS 2009
A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development
- F. Chen
- O. Bravo
- et al.
- 2006
- IRPS 2006