On the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure
- A. Reisman
- J.M. Aitken
- et al.
- 2019
- JES
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27 results for John Aitken
Temperature and field interrelation study of low-k TDDB for Cu interconnects with and without liner - New insights to the roles of Cu for a competing breakdown process
- Fen Chen
- Michael Shinosky
- et al.
- 2013
- IRPS 2013
Invasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion
- Fen Chen
- Michael Shinosky
- et al.
- 2012
- Applied Physics Letters
Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- Fen Chen
- Jeffrey Gambino
- et al.
- 2012
- IRPS 2012
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
- D.P. Ioannou
- K. Zhao
- et al.
- 2011
- IRPS 2011
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- F. Chen
- M. Shinosky
- et al.
- 2009
- IRPS 2009
Electron trapping by radiation-induced charge in MOS devices
- J.M. Aitken
- D.R. Young
- 2008
- Journal of Applied Physics
Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K
- D.J. DiMaria
- J.M. Aitken
- et al.
- 2008
- Journal of Applied Physics
Current and C-V instabilities in SiO2 at high fields
- P. Solomon
- J.M. Aitken
- 2008
- Applied Physics Letters