Conference paper
Reliability challenges with ultra-low k interlevel dielectrics
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
Anthony K. Stamper, H. Baks, et al.
AMC 2005
Qinghuang Lin, Shyng-Tsong Chen, et al.
Proceedings of SPIE - The International Society for Optical Engineering 2010
K.G. Frase, E. Liniger, et al.
Advanced Ceramic Materials