J.M. Atkin, R.B. Laibowitz, et al.
IRPS 2009
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
J.M. Atkin, R.B. Laibowitz, et al.
IRPS 2009
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
R.F. Cook, E. Liniger
MRS Spring Meeting 1998
L. Gignac, C.-K. Hu, et al.
Microelectronic Engineering