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Physica E: Low-Dimensional Systems and Nanostructures
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO 2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient. © 2004 Elsevier B.V. All rights reserved.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
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MRS Spring 2000
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