T.M. Shaw, C.-K. Hu, et al.
Applied Physics Letters
It is shown that relatively thick (10 000-Å) films of aluminum thinned by sputter-etching exhibit an increase in both the room-temperature and helium-temperature resistivities, and that this increase is too large to be explained in terms of the Fuchs (thickness) size effect or by changes in the specular scattering probability p. A part of the increase in the helium-temperature resistivity anneals out after 2 h at 250°C but a large increment remains. It is suggested that topographic and structural changes in the films may be responsible. © 1969 The American Institute of Physics.
T.M. Shaw, C.-K. Hu, et al.
Applied Physics Letters
R. Filippi, R.A. Wachnik, et al.
Journal of Applied Physics
R. Rosenberg
Applied Physics Letters
M.A. Moske, P.S. Ho, et al.
Journal of Applied Physics