Conference paper
Gate oxide reliability for nano-scale CMOS
J.H. Stathis
MIEL 2006
The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP).
J.H. Stathis
MIEL 2006
J.H. Stathis, D.J. DiMaria
IEDM 1998
R. Rodríguez, J.H. Stathis, et al.
Microelectronics Reliability
B.P. Linder, J.H. Stathis, et al.
IRPS 2001