Conference paper
Breakdown measurements of ultra-thin SiO2 at low voltage
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP).
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
J. Batey, E. Tierney, et al.
IEEE Electron Device Letters
D.J. DiMaria, J.H. Stathis
Journal of Applied Physics
J.H. Stathis, R. Bolam, et al.
INFOS 2005