L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
This study shows new results on vertically scaled carbon nanotube field-effect transistors (CNFETs) focusing in particular on short-channel effects. We show clear evidence that state-of-the-art CNFETs behave as Schottky barrier (SB) 4transistors and that SB-CNFETs exhibit a very distinct scaling behavior. The relevant scaling rules that have to be applied to ensure the desired device operation and to avoid short-channel-like effects of CNFETs are discussed for the first time.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
J.A. Barker, D. Henderson, et al.
Molecular Physics
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures