L. Tilly, P.M. Mooney, et al.
Applied Physics Letters
The dc and microwave results of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with Lg = 0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm2 devices yielded unity current gain (fT) and unilateral power gain (fmax) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm2 devices revealed minimum noise figure (Fmin) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.
L. Tilly, P.M. Mooney, et al.
Applied Physics Letters
S. Rishton, K. Ismail, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
K. Ismail, J.O. Chu, et al.
IEEE Electron Device Letters
K. Rim, S.J. Koester, et al.
VLSI Technology 2001