William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Tungsten gate metal-oxide-semiconductor capacitors formed by 6.5 nm ofthermal SiO2 and 150 nm of sputtered tungsten have been characterized. The gate metal was deposited using high argon pressure (55 mTorr) to obtain a deposit with a low residual internal stress. To avoid tungsten oxidation and to remove the oxide damage caused by the sputtering deposition process, thermal treatments (500°C ≤ T ≤ 800°C) were performed in a silicide oxygen-free furnace. The electrical characterization has shown the efficacy of the low temperature anneal and the onset of gate oxide degradation on treatments at T ≥ 700°C. There is experimental evidence that this degradation can be attributed, at least partially, to the oxygen depletion that characterizes the environment inside the silicide anneal furnace. © 1990 Elsevier Sequoia S.A.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Frank Stem
C R C Critical Reviews in Solid State Sciences