250 MHz digital FIR filters for PRML disk read channels
- D.J. Pearson
- S.K. Reynolds
- et al.
- 1995
- ISSCC 1995
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18 results for Andrew C. Megdanis
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
A novel high-performance lateral bipolar on SOI
- G. Shahidi
- D.D. Tang
- et al.
- 1991
- IEDM 1991
Trench storage capacitors for high density DRAMs
- T.V. Rajeevakumar
- T. Lii
- et al.
- 1991
- IEDM 1991
Variable-size shallow trench isolation (STI) technology with diffused sidewall doping for submicron CMOS
- B. Davari
- C. Koburger
- et al.
- 1988
- IEDM 1988
LPCVD IN-SITU ARSENIC DOPED POLYSILICON FOR VLSI APPLICATIONS.
- M. Arienzo
- A.C. Megdanis
- et al.
- 1984
- IEDM 1984
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1992
- IEEE Electron Device Letters
Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)
- Joachim N. Burghartz
- Andrew C. Megdanis
- et al.
- 1991
- IEEE Electron Device Letters
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters