Device Design Considerations for Ultra-Thin SOI MOSFETs
B. Doris, M. Ieong, et al.
IEDM 2003
The strain imparted to 60 nm wide, silicon-on-insulator (SOI) channel regions by heteroepitaxially deposited, embedded silicon-carbon (e-SiC) features was measured using x-ray microbeam diffraction, representing one of the first direct measurements of the lattice parameter conducted in situ in an SOI device channel. Comparisons of closed-form, analytical modeling to the measured, depth-averaged strain distributions show close correspondence for the e-SiC features but 95% of the predicted strain in the SOI channel. Mechanical constraint due to the overlying gate and the contribution of SOI underneath the e-SiC in the diffracting volume to the measurements can explain this difference. © 2009 American Institute of Physics.
B. Doris, M. Ieong, et al.
IEDM 2003
Stephan O. Hruszkewycz, M. Allain, et al.
Nature Materials
Conal E. Murray
ADMETA 2010
Conal E. Murray, M. Sankarapandian, et al.
Applied Physics Letters