A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
We have calculated inter-dislocation spacing and strain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values. © 1991.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
K.N. Tu
Materials Science and Engineering: A