R.W. Gammon, E. Courtens, et al.
Physical Review B
We have calculated inter-dislocation spacing and strain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values. © 1991.
R.W. Gammon, E. Courtens, et al.
Physical Review B
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.