Degradation of thin SiO 2 gate oxides by atomic hydrogen
F. Cartier, D.J. DiMaria, et al.
DRC 1994
Charge trapping in the intervening oxide layers of electrically-alterable read-only memories has been studied for different device configurations incorporating a dual electron injector structure (DEIS). The degradation of the write/erase capability of these devices is associated with electron capture in neutral trapping centers present in both chemical-vapor-deposited and thermal oxides. Annealing the exposed DEIS stack at 1000 °C in N2 results in better cycling capability. The dominant traps in unannealed samples were found to have capture cross sections of σc0x ≊10-16-10-17 cm2, while those in annealed samples have σc0x ≊10-17-10 -18 cm2.
F. Cartier, D.J. DiMaria, et al.
DRC 1994
D.J. DiMaria, J.H. Stathis
Applied Physics Letters
D.J. DiMaria, M.V. Fischetti
Applied Surface Science
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting