Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
In this paper we review recent progress in and outline the issues for high-K high-temperature (∼1000°C) poly-Si CMOS processes and devices and also demonstrate possible solutions. Specifically, we discuss device characteristics such as gate leakage currents, flatband voltage shifts, charge trapping, channel mobility, as well as integration and processing aspects. Results on a variety of high-K candidates including HfO2, Al2O3, HfO2/Al2O3, ZrO2, silicates, and AlNy(Ox) deposited on silicon by different deposition techniques are shown to illustrate the complex issues for high-K dielectric integration into current Si technology.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Sung Ho Kim, Oun-Ho Park, et al.
Small
Michiel Sprik
Journal of Physics Condensed Matter
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009