Conference paperContact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETsN. Breil, B.-C. Lee, et al.VLSI Technology 2023
Conference paperAdvanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET DevicesShogo Mochizuki, B. Colombeau, et al.IEDM 2018
PaperImpact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devicesShahab Siddiqui, Min Dai, et al.JVSTB
Conference paperNBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet TransistorHuimei Zhou, Miaomiao Wang, et al.IRPS 2020
