PaperHigh-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
PaperNanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography
Conference paperToward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
Conference paperSiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
