PaperActivation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm-3 using coimplantation of Sb and P
Conference paperUnderstanding the interfacial layer formation on strained Si1-xGex channels and their correlation to inversion layer hole mobility
Conference paperStacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
