Conference paperPerformance elements for 28nm gate length bulk devices with gate first high-k metal gateJun Yuan, C. Gruensfelder, et al.ICSICT 2010
Conference paperImproving FinFET Junctions and Contacts via Laser AnnealingOleg Gluschenkov, Yasir Sulehria, et al.IWJT 2023
Conference paperAdvanced junction formation for Sub-32nm logic devicesSadanand V. Deshpande, Ahmet Ozcan, et al.IWJT 2010
Invited talkCrystallization of hafnium-oxide-based ferroelectrics for BEOL integrationMartin M. Frank, Eduard A. Cartier, et al.EDTM 2022