R.M. Tromp, M.C. Reuter
Physical Review Letters
Silicon surfaces which had been exposed to a CF4 /H2 plasma have been characterized by x-ray photoelectron spectroscopy, ellipsometry, He ion channeling, and H profiling techniques. Plasma exposure leads to the deposition of a thin (∼30 Å thick) C,F-polymeric layer. Hydrogen and/or damage (displaced Si atoms) can be detected in the near-surface region up to a depth in excess of 400 Å from the Si surface.
R.M. Tromp, M.C. Reuter
Physical Review Letters
J. Tersoff, A.W. Denier Van Der Gon, et al.
Physical Review Letters
S.M. Schramm, J. Kautz, et al.
IBM J. Res. Dev
M. Copel, R.M. Tromp
Physical Review Letters