Sung Ho Kim, Oun-Ho Park, et al.
Small
Paper
Submicron epitaxial films
Abstract
This work focuses on the quality of epitaxial silicon deposited when the total thickness grown is in the range of 0.5-0.9 μm from the initial physical interface. Shallow junctions were fabricated to evaluate device potential of the thin films. Defect levels were evaluated. The ability to reproduce doping profiles was also evaluated. The studies have shown that the epitaxial silicon deposited to 0.5 μm thickness is suitable for device fabrication. © 1984, The Electrochemical Society, Inc. All rights reserved.
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