F. Stellari, A. Tosi, et al.
ESSDERC 2002
In this paper we show that the ability of SOI NMOS transistors to function as high-bandwidth amplifiers continuously improves as gate length shrinks below 50 nm. fT of 196 GHz is achieved at Lpoly = 47 nm. Neither the transconductance nor the input capacitance reaches a limiting value at Lpoly = 47 nm. The gate sheet resistance, which influences the FET input resistance and high-frequency noise, shows little variation and is an acceptable value (7Ω/square) in the Lpoly = 55 nm to 77 nm range. We also present four features of an aggressively scaled 0.13-μm partially-depleted SOI CMOS technology that show its suitability for high-frequency circuit applications: RF noise performance comparable to state-of-the art III-V devices, body-tied SOI FETs that achieve the same low-frequency noise as bulk FETs, a multilevel back-end that allows high-density and high-Q passives, and negligible floating-body-induced jitter in RF circuits.
F. Stellari, A. Tosi, et al.
ESSDERC 2002
X. Yu, Oleg Gluschenkov, et al.
IEDM 2011
S.K.H. Fung, L. Wagner, et al.
VLSI Technology 2000
J.O. Plouchart, Jonghae Kim, et al.
ISLPED 2003