A. Krol, C.J. Sher, et al.
Surface Science
Paper
Superlattice umklapp processes in resonant Raman scattering
Abstract
Umklapp resonant Raman scattering by LO phonons is observed in GaAsGa1-xAlxAs superlattices as a result of minizone formation in the conduction and valence bands. The scattering mechanism involves the wavevector dependent Fröhlich-type electron-phonon interaction. © 1978.
Related
R. Ghez, M.B. Small
JES
David B. Mitzi
Journal of Materials Chemistry
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS